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SEMICONDUCTOR GENERAL CATALOG

Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs IGBTs Phototransistors (for Optical Sensors)

1

2010/9　SCE0004K

Bipolar Small-Signal Transistors General-Purpose Transistors (Leaded Type) Package TO-92 (SC-43)

hFE

VCE(sat) (V) Max

12.7 MIN

Classification

IC (A) Max

4.7 MAX

5.1 MAX

VCEO (V) Max

(mm) NPN

General-purpose

Low noise

Audio drivers

High current

Darlington Muting

High breakdown voltage

PNP

2SC1815

50

0.15

70 to 700

0.25

−50

−0.15

70 to 400

−0.3

120

0.1

200 to 700

0.3

−120

−0.1

200 to 700

−0.3

50

0.15

70 to 700

0.25

−50

−0.15

70 to 400

−0.3

50

0.15

200 to 700

0.3

2SC732TM 2SC1959

2SA1015 2SC2240 2SA970 2SC1815(L) 2SA1015(L) ⎯

30

0.5

70 to 400

0.25

−30

−0.5

70 to 240

−0.25

80

0.3

70 to 240

0.5

−80

−0.3

70 to 240

−0.4

30

0.8

100 to 320

0.5

−30

−0.8

100 to 320

−0.7

20

2

120 to 700

0.5

−20

−2

120 to 400

−0.5

10

2

140 to 600

0.5

−10

−2

140 to 600

−0.5

10

5

700 to 2000

0.25

2SC5853

⎯

10

5

450 to 700

0.27

2SC5854

⎯

10

5

450 to 700

0.3

⎯

⎯

80

1.2

100 to 200

0.09

2SC6132

⎯

40

0.3

10000 min

1.3

2SC982TM

⎯

20

0.3

200 to 1200

0.1

2SC2878

⎯

300

0.1

30 to 150

0.5

2SC2551

−300

−0.1

30 to 150

−0.5

250

0.05

50 min

1.5

2SA562TM 2SC1627 2SA817 2SC2120 2SA950 2SC3266 2SA1296 2SC3279 2SA1300

2SA1091 2SC3333 2SA1320

−250

−0.05

50 min

−1.5

High-speed switching

15

0.2

40 to 240

0.3

2SC752(G)TM

⎯

High hFE

50

0.15

600 to 3600

0.25

2SC3112

⎯

• The products shown in bold are also manufactured in offshore fabs. • Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components.

2

2010/9　SCE0004K

General-Purpose Transistors (Single)

NPN 100 50 General-purpose

Low noise

High current

Strobe

30

500 500

120

100

12

400

12

500

15

800

25

800

30

800

10

2000

20

2000

20

1500

20

2500

30

3000

50

1000

50

1700

50

2500

10

5000 (3000)

80

High hFE

50

NPN

2SC6026CT 2SA2154CT 2SC6026

2SC5376CT 2SA1955CT

1.6

0.8

1.2

(mm) PNP

(mm) NPN

SSM

1.6

PNP

1.6

(mm) NPN

PNP

(mm) NPN

PNP

2SA2154 2SC6026MFV

2SA2154MFV

2SC4738F

2SA1832F

2SC4738

2SA1832

2SC5376FV

2SA1955FV

2SC5376F

2SA1955F

2SC5376

2SA1955

300 150

Muting

20

300

High-speed switching

15

200

High-voltage switching

200

50

High breakdown

250

50

voltage

300

100

40

300

Darlington

(mm) PNP

150

50

High breakdown voltage

1.0 0.8

1.0

VCEO IC Classification (V) (mA) Max Max

1.2

0.8

0.6

0.6

(Surface-Mount Type) ESM

VESM

1.6

fSM

0.85

CST3

• For the PNP transistors, the minus sign (−) indicating a negative voltage is omitted. • The products shown in bold are also manufactured in offshore fabs. • Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components.

3

2010/9　SCE0004K

USM

UFM

TSM 2.9

5.1 MAX

2.9

2.0

PNP

(mm) NPN

PNP

(mm) NPN

PNP

2SC4116 2SA1586 TTC4116FU * TTA1586FU * 2SC4118 2SA1588 2SC4117

2SA1587

2SC5233

2SA1954

(mm)

(mm)

NPN

PNP

2SC2712

2SA1162

2SC1815

2SA1015

2SC2859 2SC3325 2SC2713 2SC3324

2SA1182 2SA1313 2SA1163 2SA1312

2SC1959

2SA562TM

2SC2240

2SA970

2SC5232

2SA1953 2SA1362 2SA1298 2SA1621

2SC2120 2SC3279 2SC3266

2SA950 2SA1300 2SA1296

2SC3265 2SC4210

2SC6133 *

12.7 MIN

2.5 1.5

2.8

(mm) NPN

1.6

1.7

2.1

2.1

1.25

4.7 MAX

2.0

Leaded Type TO-92

S-MINI

NPN

PNP

2SA2214 * 2SA2215 *

2SC6134 * 2SC6135 * 2SA2195 * 2SC6100 * (2SC5766)

2SC5853 2SC5471 2SC5854 2SC6067 2SC4209

2SA1620

2SC1627

2SC4666 2SC4213

2SC3295 2SC3326

2SC3112 2SC2878

2SC4667

2SC3437

2SC752(G)TM

2SC3138

2SA1255

2SC4497 2SC2532

2SA1721

2SC3333 2SC2551 2SC982TM

2SA817

2SA1320 2SA1091 *: New product

4

2010/9　SCE0004K

General-Purpose Transistors (Dual) Dual Type CST6

fS6

ESV

USV

SMV 2.9

2.0

1.0 1.0

50

NPN

(▲12)

General -purpose 500

50

500

120

100

NPN + PNP

PNP

(mm) NPN

(mm)

PNP

NPN

(▲11)

(▲4)

HN4B04J (▲3)

HN4C51J

400

12

500

(▲1) HN4B06J

HN4A51J

15

800

25

800

30

800

Strobe High breakdown

2000 2000

10

5000

voltage High hFE

80

300

50

150

Muting

20

300

High-speed switching

15

200

High-voltage switching

200

50

High breakdown voltage • • • •

10 20

250

50

300

100

(▲3)

(▲4)

HN4C05JU ( ▲2)

High current

HN4C08J

HN4A08J (▲1)

(▲2)

Darlington 40 300 For the PNP transistors, the minus sign (−) indicating a negative voltage is omitted. The ratings enclosed in parenthesis are for those devices whose part numbers are enclosed in parentheses. The products shown in bold are also manufactured in offshore fabs. Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components.

Internal Connections Number of Pins

5

▲1

▲2

Q2

Q1

6

Q1

▲13

6

▲4

Q2

Q1

▲8

Q2

Q1

Q2

Q1

▲7

▲3

Q2

Q1

▲14

Q2

Q1

Q1

Q2

Q1

Q2

Q1

▲11

▲16

Q1 Q2

▲6

Q2

Q1

▲10

▲15

Q1

Q2

Q1

▲9

▲5

▲12

Q2

Q1

▲17

Q2

▲18

Q1 Q2

Q2

Q2

Q1

Q1

Q2

Q2

♦The internal connection diagrams only show the general configurations of the circuits.

5

*

HN4A06J

(▲2) (▲5)

12

PNP + NPN

PNP

HN4C06J Low noise

1.6

2.8

1.25

(mm) PNP + NPN

(HN2B26CT) (HN1C26FS) (HN1A26FS) 2SA1873 (▲10) (▲7) (HN1B26FS) HN4B01JE (▲18) ** 2SC4944 (▲1) 2SC4207 2SA1618 (▲9) (▲6) ( ▲2) HN4A56JU (▲1) (▲2) (HN2C26FS) (HN2A26FS)

150 (100)

30

2.1

(mm)

(mm) NPN + PNP

1.2

1.6

1.0 0.8

0.9

VCEO IC Classification (V) (mA) Max Max

1.6

2010/9　SCE0004K

ES6

US6

SM6 2.9

1.6

2.8

2.1 1.25

1.6 1.2

(mm) NPN

PNP

PNP + NPN

HN1C01FE (▲10)

HN2C01FE (▲12)

HN3C67FE (▲17)

(mm) NPN

PNP

(▲7)

HN2A01FE (▲11)

(▲10)

HN1B04FE ( ▲9)

HN2C01FU (▲12)

HN3C56FU (▲15)

PNP + NPN

(mm) NPN

PNP + NPN

PNP

HN1B01FU

HN1C01FU

HN1A01FE

1.6

2.0

HN1A01FU ( ▲7)

HN2A01FU (▲11)

HN1A01F

(▲8)

HN1B04FU (▲9)

HN1C01F (▲10)

HN3B02FU

HN1B01F

(▲7)

HN3A56F

(▲8)

HN3B01F

(▲16)

(▲13)

(▲14)

HN1B04F (▲8)

HN1C07F (▲10)

HN3C51F (▲15)

HN1A07F (▲7)

HN3A51F (▲16)

HN1C05FE (▲10)

HN1A02F (▲7)

HN1C03FU (▲10)

HN1C03F (▲10)

HN3C61FU (▲15)

*: New product **: Under development

6

2010/9　SCE0004K

20

IC(mA)

50

R2

4.7

4.7

10

10

22

22

47

47

2.2

47

4.7

47

10

47

22

47

47

22

4.7

∞

10

∞

22

∞

47

∞

1

10

2.2

10

4.7

10

10

4.7

47

10

1

⎯

100

100

100

∞

200

∞

1.0

1.0

NPN

RN1101FS RN1102FS RN1103FS RN1104FS RN1105FS RN1106FS RN1107FS RN1108FS RN1109FS RN1110FS RN1111FS RN1112FS RN1113FS

NPN

RN1101CT RN1102CT RN1103CT RN1104CT RN1105CT RN1106CT RN1107CT RN1108CT RN1109CT RN1110CT RN1111CT RN1112CT RN1113CT

PNP

RN2101CT RN2102CT RN2103CT RN2104CT RN2105CT RN2106CT RN2107CT RN2108CT RN2109CT RN2110CT RN2111CT RN2112CT RN2113CT

(mm) NPN

PNP

RN1961CT RN1962CT RN1963CT RN1964CT RN1965CT RN1966CT RN1967CT RN1968CT RN1969CT RN1970CT RN1971CT RN1972CT RN1973CT

RN2961CT RN2962CT RN2963CT RN2964CT RN2965CT RN2966CT RN2967CT RN2968CT RN2969CT RN2970CT RN2971CT RN2972CT RN2973CT

VESM

0.6

(mm)

PNP

RN2101FS RN2102FS RN2103FS RN2104FS RN2105FS RN2106FS RN2107FS RN2108FS RN2109FS RN2110FS RN2111FS RN2112FS RN2113FS

CST3

1.2

1.2

0.6

0.8

1.0

0.6

CST6

(mm) R1

100

CST3

1.0

fSM Internal Resistors (kΩ)

50

(mm)

(mm)

NPN + PNP

RN49P2ACT

0.8

VCEO(V)

0.9

Ratings

Bias Resistor Built-in Transistors (Single, General-Purpose)

NPN

RN1101ACT RN1102ACT RN1103ACT RN1104ACT RN1105ACT RN1106ACT RN1107ACT RN1108ACT RN1109ACT RN1110ACT RN1111ACT RN1112ACT RN1113ACT

PNP

NPN

RN2101ACT RN2102ACT RN2103ACT RN2104ACT RN2105ACT RN2106ACT RN2107ACT RN2108ACT RN2109ACT RN2110ACT RN2111ACT RN2112ACT RN2113ACT RN1114MFV

RN1101MFV RN1102MFV RN1103MFV RN1104MFV RN1105MFV RN1106MFV RN1107MFV RN1108MFV RN1109MFV RN1110MFV RN1111MFV RN1112MFV RN1113MFV

PNP

RN2101MFV RN2102MFV RN2103MFV RN2104MFV RN2105MFV RN2106MFV RN2107MFV RN2108MFV RN2109MFV RN2110MFV RN2111MFV RN2112MFV RN2113MFV RN2114MFV RN2115MFV RN2116MFV RN2117MFV RN2118MFV

RN1115MFV RN1116MFV RN1117MFV RN1118MFV RN1119MFV RN2119MFV RN1130MFV RN2130MFV RN1131MFV RN2131MFV RN1132MFV RN2132MFV

• For the PNP transistors, the minus sign (−) indicating a negative voltage is omitted. • The products shown in bold are also manufactured in offshore fabs. • Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components.

(Single, High-Current/Muting Switch) Muting

12

50

20

IC(mA)

500

800

300

USM

S-MINI

2.5

2.5

2.9

1.5

2.1

1.25

Internal Resistors (kΩ)

S-MINI

2.9

2.0

(mm) R1

R2

1

1

2.2

2.2

4.7

4.7

10

10

0.47

10

1

10

2.2

10

5.6

∞

10

∞

22

∞

2.2

∞

NPN

RN1321A RN1322A RN1323A RN1324A RN1325A RN1326A RN1327A

(mm)

PNP

RN2321A RN2322A RN2323A RN2324A RN2325A RN2326A RN2327A

1.5

Ratings

High Current VCEO(V)

NPN

RN1421 RN1422 RN1423 RN1424 RN1425 RN1426 RN1427

PNP

(mm) NPN

RN2421 RN2422 RN2423 RN2424 RN2425 RN2426 RN2427 RN1441 RN1442 RN1443 RN1444

• For the PNP transistors, the minus sign (−) indicating a negative voltage is omitted. • Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components.

7

2010/9　SCE0004K

50 100 SSM

PNP

RN1101F RN1102F RN1103F RN1104F RN1105F RN1106F RN1107F RN1108F RN1109F RN1110F RN1111F RN1112F RN1113F RN1114F RN1115F RN1116F RN1117F RN1118F

RN2101F RN2102F RN2103F RN2104F RN2105F RN2106F RN2107F RN2108F RN2109F RN2110F RN2111F RN2112F RN2113F RN2114F RN2115F RN2116F RN2117F RN2118F

RN1130F RN1131F RN1132F

RN2130F RN2131F RN2132F

S-MINI

TO-92 5.1 MAX

2.9

2.0

4.7 MAX 12.7 MIN

(mm)

1.5

1.25

2.1

0.8

1.6

1.6

(mm) NPN

USM

1.6

0.85

1.6

2.5

ESM

(mm)

(mm)

NPN

PNP

NPN

PNP

NPN

PNP

NPN

RN1101 RN1102 RN1103 RN1104 RN1105 RN1106 RN1107 RN1108 RN1109 RN1110 RN1111 RN1112 RN1113 RN1114 RN1115 RN1116 RN1117 RN1118

RN2101 RN2102 RN2103 RN2104 RN2105 RN2106 RN2107 RN2108 RN2109 RN2110 RN2111 RN2112 RN2113 RN2114 RN2115 RN2116 RN2117 RN2118

RN1301 RN1302 RN1303 RN1304 RN1305 RN1306 RN1307 RN1308 RN1309 RN1310 RN1311 RN1312 RN1313 RN1314 RN1315 RN1316 RN1317 RN1318

RN2301 RN2302 RN2303 RN2304 RN2305 RN2306 RN2307 RN2308 RN2309 RN2310 RN2311 RN2312 RN2313 RN2314 RN2315 RN2316 RN2317 RN2318

RN1401 RN1402 RN1403 RN1404 RN1405 RN1406 RN1407 RN1408 RN1409 RN1410 RN1411 RN1412 RN1413 RN1414 RN1415 RN1416 RN1417 RN1418

RN2401 RN2402 RN2403 RN2404 RN2405 RN2406 RN2407 RN2408 RN2409 RN2410 RN2411 RN2412 RN2413 RN2414 RN2415 RN2416 RN2417 RN2418

RN1001 RN1002 RN1003 RN1004 RN1005 RN1006 RN1007 RN1008 RN1009 RN1010 RN1011

8

(mm) PNP

RN2001 RN2002 RN2003 RN2004 RN2005 RN2006 RN2007 RN2008 RN2009 RN2010 RN2011

2010/9　SCE0004K

Bias Resistor Built-in Transistors (Dual, General-Purpose (5 Pin) ) Internal Resistors Q2

USV

1.6

2.1

2.0

1.6 1.2

Q1

ESV

1.25

Absolute Maximum Ratings VCEO IC

(mm)

(mm) Classification

NPN x 2 Q1

NPN + PNP

PNP x 2 Q2

Q1

R1

Q2

R1 (V)

50

(kΩ) R2

R1

(kΩ) R2

General-purpose