Basic Principles of Power Electronics PDF

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ｲｮｾ＠ Electric Energy Systems and Engineering Series Editors: J. G. Kassakian . D. H. Naunin Klemens Heumann Basic Principles of Power Electronics With 242 Figures Springer-Verlag Berlin Heidelberg New York London Paris Tokyo Prof. Dr.-Ing. Klemens Heumann Institut fUr Allgemeine Elektrotechnik, Tec...

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Electric Energy Systems and Engineering Series Editors: J. G. Kassakian . D. H. Naunin

Klemens Heumann

Basic Principles of Power Electronics With 242 Figures

Springer-Verlag Berlin Heidelberg New York London Paris Tokyo

Prof. Dr.-Ing. Klemens Heumann Institut fUr Allgemeine Elektrotechnik, Technische Universitat Berlin Einsteinufer 19, D-1000 Berlin 10, Fed. Rep. of Germany

Series Editors:

Prof. J. G. Kassakian Massachusetts Institute of Technology,

77 Massachusetts Ave., Cambridge, MA 02139, USA

Prof. D.H. Naunin Institut fUr Elektronik, Technische Universitat Berlin, Einsteinufer 19, D-1000 Berlin 10, Fed. Rep. of Germany

Exclusively authorized English translation of the original German book "Grundlagen der Leistungselektronik", 3rd edition, B. G. Teubner, Stuttgart, 1985.

ISBN-13 :978-3-642-82676-4 e- ISBN-13 :978-3-642-82674-0 DOl: 10.1007/978-3-642-82674-0 Library of Congress Cataloging in Publication Data. Heumann, Klemens. Basic principles of power electronics. (Electric energy systems and engineering series) Translation of: Grundlagen der Leistungselektronik. Bibliography: p. Includes index. 1. Power electronics. I. Title. II. Series. TK7881.15.H4813 1986 621.381 86-10231 ISBN-13:978-3-642-82676-4 (U.S.) This work is subject to copyright. All rights are reserved, whether the whole or part of the material is concerned, specifically those of translation, reprinting, re-use of illustrations, broadcasting, reproduction by photocopying machine or similar means, and storage in data banks. Under § 54 of the German Copyright Law where copies are made for other than private use, a fee is payable to "Verwertungsgesellschaft Wort", Munich.

© Springer-Verlag Berlin Heidelberg 1986 Softcover reprint of the hardcover 1st edition 1986 The use of registered names, trademarks, etc. in this publication does not imply, even in the absence of a specific statement, that such names are exempt from the relevant protective laws and regulations and therefore free for general use. Typesetting: With a system of the Springer Produktions-Gesellschaft, Berlin. Dataconversion: Briihlsche Universitatsdruckerei, GieBen. 2161/3020-543210

Introduction to the Electric Energy Systems and Engineering Series

Concerns for the continued supply and efficient use of energy have recently become important forces shaping our lives. Because of the influence which energy issues have on the economy, international relations, national security, and individual well-being, it is necessary that there exists a reliable, available and accurate source of information on energy in the broadest sense. Since a major form of energy is electrical, this new book series titled Electric Energy Systems and Engineering has been launched to provide such an information base in this important area. The series coverage will include the following areas and their interaction and coordination: generation, transmission, distribution, conversion, storage, utilization, economics. Although the series is to include introductory and background volumes, .special emphasis will be placed on: new technologies, new adaptations of old technologies, materials and components, measurement techniques, control - including the application of microprocessors in control systems, analysis and planning methodologies, simulation, relationship to, and interaction with, other disciplines. The aim of this series is to provide a comprehensive source of information for the developer, planner, or user of electrical energy. It will also serve as a visible and accessible forum for the publication of selected research results and monographs of timely interest. The series is expected to contain introductory level material of a tutorial nature, as well as advanced texts and references for graduate students, engineers and scientists. The editors hope that this series will fill a gap and find interested readers. John G. Kassakian· Dietrich H. Naunin

Preface

Power electronics became an identifiably separate area of electrical engineering with the invention of the thyristor about 30 years ago. The growing demand for controllability and conversion of electric energy has made this area increasingly important, which in turn has resulted in new device, circuit and control developments. In particular, new components, such as the GTO and power MOSFET, continue to extend power electronic technology to new applications. The technology embodied by the name "power electronics" is complex. It consists of both power level and signal level electronics, as well as thermal, mechanical, control, and protection systems. The power circuit, that part of the system actually processing energy, can be thought of as an amplifier around which is placed a closed loop control system. The goal of this book is to provide an easily understood exposition of the principles of power electronics. Common features of systems and their behavior are identified in order to facilitate understanding. Thyristor converters are distinguished and treated according to their mode of commutation. Circuits for various converters and their controls are presented, along with a description of ancillary circuits such as those required for snubbing and gate drives. Thermal and electrical properties of semiconductor power devices are discussed. The line-converter and converter-load interfaces are examined, leading to some general statements being made about energy transfer. Application areas are identified and categorized with respect to power and frequency ranges. The many tables presented in the book provide an easily used reference source. Valid IEC and German DIN standards are used in examples throughout the book. This book is designed to provide an overview of power electronics for students as well as practicing engineers. Only a basic knowledge of electrical engineering and mathematics is assumed. The list of references at the end of the book gives a survey of the field as it has developed over time. Understandably, the majority are cited from German publications. This book was first published in German, and has been translated into Japanese, Spanish, and Hungarian. The author is pleased that an English edition has now been published. Berlin, June 1986

Klemens Heumann

Contents

List of Principal Letter Symbols

. XV

1 Introduction and Definitions .

1.1 Development History . 1.2 Basic functions of Static Converters 2 System components

1 1 5

. . . .

7

2.1 Linear Components . . 2.2 Semiconductor Switches 2.3 Network Simulation. . 2.4 Non-linear Components

8 10 11

3 Power Semiconductor Devices

13

3.1

Semiconductor Diodes. 3.1.1 Characteristic Curve 3.1.2 Switching Behaviour 3.2 Thyristors . . . . . . . . 3.2.1 Characteristic Curve 3.2.2 Switching Behaviour 3.2.3 Thyristor Specifications 3.2.4 Types of Thyristor . . 3.2.4.1 Triac . . . . 3.2.4.2 Asymmetrical Silicon Controlled Rectifier (ASCR) 3.2.4.3 Reverse Conducting Thyristor (RCT) . 3.2.4.4 Gate-assisted-turn-off-thyristor (GATT) 3.2.4.5 Gate Turn-off Thyristor (GTO) . 3.2.4.6 Light-triggered Thyristor. . . . 3.2.4.7 Static Induction Thyristor (SITh) 3.3 Power transistors . . . . . . . . . . . . 3.3.1 Bipolar Power Transistors . . . . . 3.3.1.1 Construction of a Transistor 3.3.1.2 Basic Connections. . 3.3.1.3 Characteristic Curves 3.3.1.4 Switching Behaviour. 3.3.2 MOS Power Transistors . . .

7

16 16 17 18 18 19 21 22 23 23 25 25 26 27 27 28 30 30 30 31 32 33

x

Contents

3.3.3

3.3.2.1 Construction of a MOSFET . . 3.3.2.2 Characteristic Curves . . . . . 3.3.2.3 Control and Switching Behaviour Static Induction Transistor (SIT) . . . .

4 Snubber Circuits, Triggering, Cooling, and Protection Devices

4.1

Snubber Circuits . . . . . . . . . . . 4.1.1 Recovery Effect Snubber Circuits. . . . 4.1.2 Rate of Rise of Voltage Limitation . . . 4.1.3 Transformer and Load Snubber Circuits . 4.1.4 Series Connection. . . . . . . . . 4.1.5 Parallel Connection. . . . . . . . 4.1.6 Snubber Circuits for GTO-Thyristor. 4.2 Triggering. . . . . . 4.2.1 Triggering Area 4.2.2 Trigger Pulse. . 4.2.3 Trigger Pulse Generator 4.2.3.1 Trigger Pulse Generator for Thyristor 4.2.3.2 Trigger Pulse Generator for GTO 4.2.4 Trigger Equipment . . . . . . . . 4.3 Cooling. . . . . . . . . . . . . . . . 4.3.1 Operating and Limiting Temperatures 4.3.2 Losses. . . . . . . . . . 4.3.3 Thermal Equivalent Circuit 4.3.4 Heat Sinks. . . 4.3.5 Types of Cooling 4.4 Protection Devices . .

5 Switching Operations and Commutation .

5.1 5.2 5.3 5.4 5.5

Switching Behaviour of Electrical networks. 5.1.1 Switching an Inductance. 5.1.2 Switching a Capacitor . Definition of Commutation Natural Commutation. Forced Commutation Types of Converters. .

6 Semiconductor Switches and Power Controllers for AC

6.1

Semiconductor Switches for Single-phase and Three-phase AC 6.1.1 Semiconductor Switches. . 6.1.2 Switching Single-phase AC. . . . . . 6.1.3 Switching Three-phase AC. . . . . . 6.1.4 Switching Inductances and Capacitors . 6.2 Semiconductor Power Controllers for Single-phase and Three-phase AC . . . . . . . . . . . . . . . . .

33 34 34 35 36 36 37

38

39 40

41 42 43 43 44 45 45 45 48

49 49 50

51 55

55 58

62 62 63 64 65 66 67

68

70 70 71 74 75 79 81

Contents

XI

6.2.1 6.2.2 6.2.3 6.2.4

Controlling Single-phase AC . Controlling Three-phase AC . Reactive and Distortion Power Control Techniques. .

7 Externally Commutated Converters .

7.1

7.2 7.3

Line-commutated Rectifiers and Inverters 7.1.1 Operation in the Rectifier Mode 7.1.2 Operation in the Inverter Mode. 7.1.3 Line Commutation . . 7.1.4 Load Characteristic. . 7.1.5 Converter Connections 7.1.6 Converter Transformer 7.1.7 Reactive Power. . . . 7.1.8 Half-controllable Connections 7.1.9 Harmonics. . . . . . . . Line-commutated Cycloconverters. 7.2.1 Double Converters . 7.2.2 Cycloconverters . . . . . Load-commutated Inverters . . . 7.3.1 Parallel Resonant Circuit Inverters 7.3.2 Series Resonant Circuit Inverters 7.3.3 Motor-commutated Inverters.

8 SeH-commutated Converters. . . . .

8.1

Semiconductor Switches for DC 8.1.1 Closing a DC Circuit . . 8.1.2 Opening a DC Circuit. . 8.2 Semiconductor Power Controllers for DC 8.2.1 Current and Voltage Waveforms . 8.2.2 Transformation Equations . . . . 8.2.3 Energy Recovery and Multi-quadrant Operation 8.2.4 Capacitive Quenching Circuits . . . . . . . . 8.2.5 Control Techniques. . . . . . . . . . . . . 8.2.6 Calculation of Smoothing Inductance and Smoothing Capacitor Values. . . . . . . . . . . . 8.2.7 Pulse-controlled Resistance. . . . . . . . 8.2.8 Analysis of a Capacitive Quenching Process 8.2.9 Construction of an Energy Balance-sheet. 8.3 Self-commutated Inverters . . . . . . . . . 8.3.1 Single-phase Self-commutated Inverters 8.3.2 Multi-phase Self-commutated Inverters 8.3.3 Voltage Control . . . . . . . . . . 8.3.4 Pulse Width Modulated (PWM) Inverter. 8.3.5 Converter with Sector Control 8.4 Reactive Power Converters. . . . . . . . . .

81 84 84 86 88 88 89 90 92 97 100 112 116

122 126

134 134 139

142 142 144

146 148

148 148 149 152 152 153 154 156 158 159 160 162 164 165 166 168 170 172 173 178

Contents

XII

9 Power Systems for Converters 9.1 9.2 9.3

181

Characteristics of Electrical Power Systems. DC System . . . . . . . . . . . . . Single-phase and Three-phase AC Systems

181 184 185 192

10 Loads for Converters. . . . . . . . . . . . 10.1 10.2 10.3 10.4 10.5 10.6 10.7

Resistance, Inductance, and Capacitance as Load Internal Impedance of the Converter Motor Load . . Battery Load. . . . . . . . . . Distorting Load . . . . . . . . Types of Duty and Classes of Load Service Conditions

11 Energy Conditions . . .

194 197 197 199 199 . 200 .202 .204

11.1 Energy Sources. . . . 11.2 Waveform of Power against Time. . 11.3 Types of Converter . . . . . . . 11.3.1 Converters with Commutation on the AC Side . . 11.3.2 Converters with Commutation on the DC Side . 11.4 Coupling of Power Systems . . . . . . . . . . . 11.4.1 Coupling of Single-phase AC and DC Systems . . 11.4.2 Coupling of Three-phase AC and DC Systems . 11.5 Pulse Number . . . . . . . . . . . . . . . . . 11.6 Pulse Frequency . . . . . . . . . . . . . . . . . . 11.6.1 Pulse Converters with Commutation on the DC Side . 11.6.2 Pulse Converters with Commutation on the AC Side 11.7 Reactive Power Compensation and Balancing of Unbalanced Load 11.7.1 Reactive Power Compensation . . 11.7.2 Balancing of Unbalanced Load. . . 11.8 Losses and Efficiency 12 Control Conditions. . . . 12.1 Terms and Designations 12.1.1 Open-loop Control 12.1.2 Closed-loop Control 12.2 Converters as Correcting Unit 12.2.1 Open-loop Control with Converters as Correcting Unit 12.2.2 Closed-loop Control with Converters as Correcting Unit 12.3 Control System Elements . . . . . . 12.3.1 Linear Control System Elements 12.3.2 Dead Time Element. . 12.3.3 Characteristic Element. 12.3.4 Configuration Diagram 12.4 Internal Closed-loop Controls

204 205 208 208 210 212 214 217 220 222 223 227 230 230 232 234

. 238 . . . . . . . . . . . .

238 238 239 241 241 242 243 243 245 245 246 247

Contents

XIII

13 Semiconductor Converter Applications.

248

13.1 Main Applications . . . 13.1.1 Industrial Drives . 13.1.2 Power Generation 13.1.3 Power Distribution 13.1.4 Electric Heating 13.1.5 Electrochemistry . 13.1.6 Traction. . . . . 13.1.7 Domestic Equipment 13.2 Power Range. . . . . . . 13.2.1 Limiting Specifications of Power Semiconductor Devices. 13.2.2 Line-commutated Converters . 13.2.3 Load-commutated Converters . . . . . . . . 13.2.4 Self-commutated Converters . . . . . . . . . 13.2.5 Semiconductor Switches and Power Controllers . 13.3 Frequency Range .

248 248 255 255 258 260 261 264 264 265 266 266 268 270 271

14 Tests

272

References.

275

SUbject Index

289

List of Principal Letter Symbols

Time variable quantities: u,i U,I

U,i

instantaneous values root-mean-square values peak values

List of suffixes AV,av EFF, eff M,max N b k i L

average (arithmetical mean) effective (root-mean-square) maximum nominal value, rated value or at rated load due to converter reactors commutation, short circuit ideal value line due to converter transformer stray

Electrical and other physical quantities letter symbol

quantity

unit

B C

magnetic induction capacitance snubber capacitance commutation capacitance smoothing capacitance distortion power total resistive direct voltage regulation total inductive direct voltage regulation total resistance direct voltage regulation (relative) resistive direct voltage regulation due to main and interphase transformer (relative) total inductive direct voltage regulation (relative) inductive direct voltage regulation due to converter reactors (relative) inductive direct voltage regulation due to converter transformer (relative) inductive direct voltage regulations due to ac system reactance (relative) frequency factor at which the direct current becomes intermittent pulse frequency number of sets of commutating groups between IdN is divided content of fundamental magnetic field strength current

T=Vs/m 2

CD CK Cd D

Dr

D, dr dr !

F=AsfV

F

F F

VA V V 1, % 1, % 1, % 1, % 1, % 1, %

1, % Ajm A

XVI Id IL IlL ILi Ip Iv Iv k L Ld

4

La M n p P,p Po Pd PI PL P IL P vt Q Q Q QL QIL q R S Sd SL SIL SiL Sm s T TI T2 t

t,. tF tR tq tc U,u Ud U di U dia U dr U drt U dx U dxb U dxt U dxL

List of Principal Letter Symbols direct current (arithmetical mean) current on line side fundamental wave of IL ideal current on line side branch circuit current current on cell side of transformer harmonic oscillation of current (order v) relative harmonic content, distortion factor inductance smoothing inductance commutation inductance stray inductance torque rotational speed pulse number real power output power of converter real power on dc side input power of converter real power on line side real power of fundamental on line side winding losses of converter transformer reactive power short-circuit capacity of the ac system electric charge reactive power on line side reactive power on line side based on fundamental current commutating number resistance apparent power apparent power on dc side apparent power on line side apparent power on line side ideal apparent power on line side short-circuit capacity of the ac system number of series connected commutating groups period cycle; time constant turn-on time turn-off time time time of overlap (of commutation) current conduction time blocking time circuit commutated turn-off time hold-off interval voltage direct voltage (arithmetical mean) ideal no-load direct voltage (at at = 0 ) controlled ideal no-load direct voltage total resistive direct voltage regulation resistive direct voltage regulation due to converter transformer total inductive direct voltage regulation inductive direct voltage regulation due to converter reactors inductive direct voltage regulation due to converter transformer inductive direct voltage regulation due to ac system reactors

A A A A A A A 1, % H=Vs/A H H H Nm min- l W=VA W W W W W W VA, var VA C=As var var Q=V/A VA VA VA VA VA VA s s s s s s, 0, rad s, 0, rad s s V V V V V V V V V V

List of Principal Letter Symbols V dO V dO• V dOO V d• Vim V iOm

Vk U kt

VL Vm

V xt llxt

V vi U

Uo

W,W Wi

Z

rx ~

~

y /)

TJ

A V

V 't

lOOOA for maximum average on-state current. With F-type thyristors according to the circuit-commutated recovery time voltages of 1.2 kV to 2.5 kV are attained at currents of more than 500A [3.9, 3.12]. Devices with very high current ( > 2500 A) and voltage ( > 2500 V) ratings rely on large diameter, uniformly doped, and defect free silicon wafer for their fabrication [3.10, 3.17]. A particularly homogeneous doping of the initial silicon material is achieved by neutron radiation in a nuclear reactor. In this wayan exactly defined number of silicon atoms is converted into phosphorus atoms which are distributed extremely uniformly throughout the bulk of the crystal. Large diameter silicon crystals can thus be manufactured with highly homogenous doping. This neutron-doped silicon material (NDS) can be used to build high-current thyristors with a crystal diameter of over 100 mm. 3.2.4 Types of Thyristor

Until now the standard thyristor has been described using a characteristic curve in accordance with Fig. 3.7. To be more accurate this is a reverse blocking thyristor triode controlled on the cathode side. Besides this there is a whole series of other types of thyristors. Generally a thyristor is defined as a bistable semiconductor component with at least three junctions that can be changed over from an off-state into an on-state or vice versa. However, the expression Thyristor may be used for the reverse blocking thyristor triode solely when misunderstandings cannot arise. Other type...