ECE 346 Lab 5 - Semester: Fall 2016 Professor: Michael Stroscio Course: ECE 346 Document: Lab report 5. PDF

Preview

Summary

Semester: Fall 2016
Professor: Michael Stroscio
Course: ECE 346
Document: Lab report 5....

Description

Student: TA:

Class: ECE 346: Solid State Device Theory Date:

Objective The purpose of this experiment is to study the effect that temperature has on the 𝑖𝑖 − 𝑖𝑖 characteristics of a p-n junction diode. Theory

Circuit

1|Σελίδα

Student: TA:

Class: ECE 346: Solid State Device Theory Date:

Procedure 1. The 1N4728 diode is to be used in the construction of the circuit.

2|Σελίδα

Student: TA:

Class: ECE 346: Solid State Device Theory Date:

2. The oscilloscope should be set to the X-Y mode. The amplifications/attenuations are to be adjusted to get the 𝑖𝑖 −𝑖𝑖 graph on the scope. The horizontal and vertical scales and settings are to be noted. 3. The oscilloscope is to be set to the Alt-mode and the amplifications/attenuations are to be adjusted to get clear waveforms. After, the two waveforms are to be traced. Again, the vertical scales and settings are to be noted. 4. The 1N4728 and 1N4747 diodes are to be placed in the oven. 5. After the construction of the circuit on the printed circuit board, the 𝑖𝑖 −𝑖𝑖 behavior for each diode is to be recorded. DMM #1 will read current and DMM #2 will read voltage. With switch (S1), each diode is to be selected for measurement. Switch (S2) is used for reversing the applied voltage (FB or RB). 6. 𝑖𝑖 −𝑖𝑖 are to be recorded when each diode is forward biased at 0.0, 0.5, 1.0, 1.5, etc, until the diode starts to conduct significant current (>100 mA). 7. When 𝑖𝑖 = +2 mA, the voltage, referred to as “VDo”, is to be recorded. 8. 𝑖𝑖 −𝑖𝑖 are to be recorded when each diode is reverse biased at 0.0, -0.5, -1.0, etc, until the diode starts to conduct significant current (=...