Habilitacion B Dispositivos Electronicos 2017 PDF

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UNIVERSIDAD INDUSTRIAL DE SANTANDER Escuela de Ingenierías Eléctrica, Electrónica y de Telecomunicaciones DISPOSITIVOS ELECTRÓNICOS HABILITACIÓN. PROF.: AA, JM & ER. Nombre:

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1) [1.5] Determine the small signal resistance viewed from node Vx to ground in the circuit shown in Figure 1. Assume all transistors in saturation region and consider channel length modulation effect. VDD, Ib and Ia are ideal sources. Body effect can be neglected.

Figure 1.

UNIVERSIDAD INDUSTRIAL DE SANTANDER Escuela de Ingenierías Eléctrica, Electrónica y de Telecomunicaciones

2) [1.5] Design the two-input non-inverting summer presented in Figure 2 whose output voltage is given by Vo= 8*( vI1+ vI2 ). The resistance of each input terminal to ground must be equal to 10kOhm. Moreover, when only one input is present, the current flowing the grounded branch (the branch of the deactivate input) is equal to 1/10th of the current flowing the input branch (the branch of the active input)". (Hints: Assume

vI1 = vI2 = vI

and R2 = R1).

Figure 2.

UNIVERSIDAD INDUSTRIAL DE SANTANDER Escuela de Ingenierías Eléctrica, Electrónica y de Telecomunicaciones

3) [1.5] Design a circuit that exhibits the input/output characteristic of Figure 3. Use 1k Ohm resistors, ideal diodes, and other components as you need them.

Figure 3.

UNIVERSIDAD INDUSTRIAL DE SANTANDER Escuela de Ingenierías Eléctrica, Electrónica y de Telecomunicaciones

4) [0.5] In a semiconductor, how must be choose the carrier densities if it is desirable to 2 2 get Idrift_e- = 2*Idrift_p+ if we have = 480 cm and = 1350 cm ? V s V s *

a) b) c) d) e)

p= 2.03*ni, n= 0.74*ni n= 1.819*ni, p= 1.26*ni p= 1.53*ni, n= 1.223*ni p= 1.05*ni, n= 0.953*ni p= 1.18*ni, n= 0.843*ni

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