74HC04 - Datasheet para circuito integrado PDF

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Datasheet para circuito integrado...

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INTEGRATED CIRCUITS

DATA SH EET

74HC04; 74HCT04 Hex inverter Product specification Supersedes data of 1993 Sep 01

2003 Jul 23

Philips Semiconductors

Product specification

Hex inverter

74HC04; 74HCT04 DESCRIPTION

FEATURES

The 74HC/HCT04 are high-speed Si-gate CMOS devices and are pin compatible with low power Schottky TTL (LSTTL). They are specified in compliance with JEDEC standard no. 7A. The 74HC/HCT04 provide six inverting buffers.

Complies with JEDEC standard no. 8-1A ESD protection: HBM EIA/JESD22-A114-A exceeds 2000 V MM EIA/JESD22-A115-A exceeds 200 V. Specified from 40 to +85 C and 40 to +125 C. QUICK REFERENCE DATA GND = 0 V; Tamb = 25 C; tr = tf SYMBOL

6.0 ns.

PARAMETER

CONDITIONS

tPHL/tPLH CI

propagation delay nA to nY input capacitance

CL = 15 pF; VCC = 5 V

CPD

power dissipation capacitance per gate notes 1 and 2

TYPICAL HC04

VCC2

fi

N + (CL

VCC2

8 3.5

ns pF

21

24

pF

fo) where:

fi = input frequency in MHz; fo = output frequency in MHz; CL = output load capacitance in pF; VCC = supply voltage in Volts; N = total load switching outputs; (CL

VCC2

fo) = sum of the outputs.

2. For 74HC04: the condition is VI = GND to VCC. For 74HCT04: the condition is VI = GND to VCC

1.5 V.

FUNCTION TABLE See note 1. INPUT

OUTPUT

nA

nY

L

H

H

L

Note 1. H = HIGH voltage level; L = LOW voltage level.

2003 Jul 23

2

UNIT

7 3.5

Notes 1. CPD is used to determine the dynamic power dissipation (PD in W). PD = CPD

HCT04

Philips Semiconductors

Product specification

Hex inverter

74HC04; 74HCT04

ORDERING INFORMATION TYPE NUMBER

PACKAGE TEMPERATURE RANGE

PINS

PACKAGE

MATERIAL

CODE

74HC04N

40 to +125 C

14

DIP14

plastic

SOT27-1

74HCT04N

40 to +125 C

14

DIP14

plastic

SOT27-1

74HC04D 74HCT04D

40 to +125 C 40 to +125 C

14 14

SO14 SO14

plastic plastic

SOT108-1 SOT108-1

74HC04DB

40 to +125 C

14

SSOP14

plastic

SOT337-1

74HCT04DB

40 to +125 C

14

SSOP14

plastic

SOT337-1

74HC04PW 74HCT04PW

40 to +125 C 40 to +125 C

14 14

TSSOP14 TSSOP14

plastic plastic

SOT402-1 SOT402-1

74HC04BQ

40 to +125 C

14

DHVQFN14

plastic

SOT762-1

74HCT04BQ

40 to +125 C

14

DHVQFN14

plastic

SOT762-1

PINNING PIN

SYMBOL

DESCRIPTION

1

1A

data input

2 3

1Y 2A

data output data input

4

2Y

5

handbook, halfpage

1A

1

14 VCC

data output

1Y

2

13 6A

3A

data input

2A

3

12 6Y

6 7

3Y GND

data output ground (0 V)

2Y

4

3A

5

10 5Y

8

4Y

data output

9

4A

data input

3Y

6

9 4A

10 11

5Y 5A

data output data input

GND

7

8 4Y

12

6Y

data output

13

6A

data input

14

VCC

supply voltage

2003 Jul 23

04

11 5A

MNA340

Fig.1

3

Pin configuration DIP14, SO14 and (T)SSOP14.

Philips Semiconductors

Product specification

Hex inverter

handbook, halfpage

74HC04; 74HCT04

1A

VCC

1

14

handbook, halfpage

1

1A

1Y

2

3

2A

2Y

4

5

3A

3Y

6

5Y

9

4A

4Y

8

4A

11

5A

5Y

10

13

6A

6Y

12

1Y

2

13

6A

2A

3

12

6Y

2Y

4

11

5A

3A

5

10

3Y

6

9

GND(1)

Top view

7

8

GND

4Y

MBL760 MNA342

(1) The die substrate is attached to this pad using conductive die attach material. It can not be used as a supply pin or input.

Fig.2 Pin configuration DHVQFN14.

handbook, halfpage

1

3

5

1

Fig.3 Logic symbol.

2

1

4

1

6 handbook, halfpage

9

11

13

1

Y MNA341

8

1

A

10

1

12 MNA343

Fig.4 IEC logic symbol.

2003 Jul 23

Fig.5 Logic diagram (one inverter).

4

Philips Semiconductors

Product specification

Hex inverter

74HC04; 74HCT04

RECOMMENDED OPERATING CONDITIONS SYMBOL

PARAMETER

74HC04

CONDITIONS

TYP.

MAX.

MIN.

TYP.

MAX.

5.0

6.0 VCC

4.5 0

5.0

5.5 VCC

V V

VCC

0

VCC

V

+25

+125

+25

+125

supply voltage input voltage

2.0 0

VO

output voltage

0

ambient temperature

tr, tf

input rise and fall times

40

see DC and AC characteristics per device VCC = 2.0 V

UNIT

MIN.

VCC VI Tamb

74HCT04

40

C

1000

VCC = 4.5 V VCC = 6.0 V

6.0

ns

500 400

6.0

500

ns ns

LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134); voltages are referenced to GND (ground = 0 V). SYMBOL

PARAMETER

CONDITIONS

MIN. 0.5

MAX. +7.0

UNIT

VCC

supply voltage

V

IIK

input diode current

VI < 0.5 V or VI > VCC + 0.5 V

20

mA

IOK

output diode current

IO

VO < 0.5 V or VO > VCC + 0.5 V 0.5 V < VO < V CC + 0.5 V

20 25

mA mA

50

mA

+150

C

ICC, IGND

output source or sink current VCC or GND current

Tstg

storage temperature

Ptot

power dissipation DIP14 package

Tamb = 40 to +125 C; note 1

750

mW

other packages

Tamb = 40 to +125 C; note 2

500

mW

65

Notes 1. For DIP14 packages: above 70 C derate linearly with 12 mW/K. 2. For SO14 packages: above 70 C derate linearly with 8 mW/K. For SSOP14 and TSSOP14 packages: above 60 C derate linearly with 5.5 mW/K. For DHVQFN14 packages: above 60 C derate linearly with 4.5 mW/K.

2003 Jul 23

5

Philips Semiconductors

Product specification

Hex inverter

74HC04; 74HCT04

DC CHARACTERISTICS Type 74HC04 At recommended operating conditions; voltages are referenced to GND (ground = 0 V). SYMBOL

PARAMETER

TEST CONDITIONS OTHER

MIN.

TYP.

MAX.

UNIT

VCC (V)

Tamb = 25 C VIH

VIL

VOH

VOL

ILI IOZ ICC

2003 Jul 23

HIGH-level input voltage

LOW-level input voltage

HIGH-level output voltage

LOW-level output voltage

2.0

1.5

1.2

V

4.5 6.0

3.15 4.2

2.4 3.2

V V

2.0

0.8

0.5

V

4.5

2.1

1.35

V

6.0

2.8

1.8

V

VI = VIH or VIL IO = 20 A

2.0

1.9

2.0

V

IO = 20 A

4.5

4.4

4.5

V

IO = 4.0 mA IO = 20 A

4.5 6.0

3.98 5.9

4.32 6.0

V V

IO = 5.2 mA

6.0

5.48

5.81

V

VI = VIH or VIL IO = 20 A IO = 20 A

2.0 4.5

0 0

0.1 0.1

V V

IO = 4.0 mA

4.5

0.15

0.26

V

IO = 20 A

6.0

0

0.1

V

6.0 6.0

0.16 0.1

0.26 0.1

V A

.0.5

A

IO = 5.2 mA VI = VCC or GND

input leakage current 6.0 3-state output OFF current VI = VIH or VIL; VO = V CC or GND quiescent supply current VI = VCC or GND; IO = 0 6.0

6

2

A

Philips Semiconductors

Product specification

Hex inverter

SYMBOL

PARAMETER

74HC04; 74HCT04

TEST CONDITIONS OTHER

VCC (V)

MIN.

TYP.

MAX.

UNIT

Tamb = 40 to +85 C VIH

VIL

VOH

VOL

HIGH-level input voltage

LOW-level input voltage

HIGH-level output voltage

LOW-level output voltage

VI = VIH or VIL IO = 20 A

2.0

1.5

V

4.5 6.0

3.15 4.2

V V

2.0

0.5

V

4.5

1.35

V

6.0

1.8

V

2.0

1.9

V

IO = 20 A IO = 4.0 mA IO = 20 A

4.5

4.4

V

4.5 6.0

3.84 5.9

V V

IO = 5.2 mA

6.0

5.34

V

VI = VIH or VIL IO = 20 A IO = 20 A

2.0 4.5

0.1 0.1

V V

IO = 4.0 mA

4.5

0.33

V

IO = 20 A

6.0

0.1

V

ILI

input leakage current

6.0 6.0

0.33 1.0

V A

IOZ

6.0 3-state output OFF current VI = VIH or VIL; VO = V CC or GND quiescent supply current VI = VCC or GND; IO = 0 6.0

.5.0

A

ICC

2003 Jul 23

IO = 5.2 mA VI = VCC or GND

7

20

A

Philips Semiconductors

Product specification

Hex inverter

SYMBOL

PARAMETER

74HC04; 74HCT04

TEST CONDITIONS OTHER

VCC (V)

MIN.

TYP.

MAX.

UNIT

Tamb = 40 to +125 C VIH

VIL

VOH

VOL

HIGH-level input voltage

LOW-level input voltage

HIGH-level output voltage

LOW-level output voltage

VI = VIH or VIL IO = 20 A

2.0

1.5

V

4.5 6.0

3.15 4.2

V V

2.0

0.5

4.5

1.35

V

6.0

1.8

V

2.0

1.9

V

IO = 20 A IO = 20 A IO = 4.0 mA

4.5

4.4

V

6.0 4.5

5.9 3.7

V V

IO = 5.2 mA

6.0

5.2

V

VI = VIH or VIL IO = 20 A IO = 20 A

2.0 4.5

0.1 0.1

V V

IO = 20 A

6.0

0.1

V

IO = 4.0 mA

4.5

0.4

V

IO = 5.2 mA VI = VCC or GND

6.0 6.0

0.4 1.0

V A

ILI

input leakage current

IOZ

6.0 3-state output OFF current VI = VIH or VIL; VO = V CC or GND quiescent supply current VI = VCC or GND; IO = 0 6.0

ICC

2003 Jul 23

V

8

10.0 40

A A

Philips Semiconductors

Product specification

Hex inverter

74HC04; 74HCT04

Type 74HCT04 At recommended operating conditions; voltages are referenced to GND (ground = 0 V). SYMBOL

PARAMETER

TEST CONDITIONS OTHER

MIN.

TYP.

MAX.

UNIT

VCC (V)

Tamb = 25 C VIH VIL

HIGH-level input voltage

4.5 to 5.5

LOW-level input voltage

4.5 to 5.5

VOH

HIGH-level output voltage

VOL

LOW-level output voltage

VI = VIH or VIL IO = 20 A IO = 4.0 mA

4.5 4.5

VI = VIH or VIL IO = 20 A IO = 4.0 mA

4.5 4.5 5.5

ILI

input leakage current

VI = VCC or GND

IOZ

3-state output OFF current

ICC

quiescent supply current

5.5 VI = VIH or VIL; VO = VCC or GND; IO = 0 VI = VCC or GND; 5.5 IO = 0 VI = VCC 2.1 V; 4.5 to 5.5 IO = 0

ICC

additional supply current per input

2.0

1.6 1.2

4.4 3.84

V 0.8

4.5 4.32 0 0.15

120

V V V

0.1 0.26

V V

0.1

A

0.5

A

2

A

432

A

Tamb = 40 to +85 C VIH

HIGH-level input voltage

4.5 to 5.5

VIL

LOW-level input voltage

4.5 to 5.5

VOH

HIGH-level output voltage

VOL

LOW-level output voltage

ILI

input leakage current

IOZ

3-state output OFF current

ICC

quiescent supply current

ICC

2003 Jul 23

additional supply current per input

2.0

V 0.8

V

VI = VIH or VIL IO = 20 A IO = 4.0 mA

4.5 4.5

VI = VIH or VIL IO = 20 A

4.5

0.1

V

IO = 4.0 mA VI = VCC or GND

4.5 5.5

0.33 1.0

V A

5.0

A

5.5 VI = VIH or VIL; VO = VCC or GND; IO = 0 VI = VCC or GND; 5.5 IO = 0 VI = VCC 2.1 V; 4.5 to 5.5 IO = 0

9

4.4 3.84

V V

20

A

540

A

Philips Semiconductors

Product specification

Hex inverter

SYMBOL

74HC04; 74HCT04

PARAMETER

TEST CONDITIONS OTHER

MIN.

TYP.

MAX.

UNIT

VCC (V)

Tamb = 40 to +125 C VIH

HIGH-level input voltage

4.5 to 5.5

VIL

LOW-level input voltage

4.5 to 5.5

VOH

HIGH-level output voltage

VI = VIH or VIL IO = 20 A IO = 4.0 mA

VOL

LOW-level output voltage

V

4.5

3.7

V

VI = VIH or VIL IO = 20 A

4.5

0.1

V

IO = 4.0 mA

4.5

0.4

V

5.5

input leakage current

IOZ

3-state output OFF current

ICC

quiescent supply current

5.5 VI = VIH or VIL; VO = VCC or GND; IO = 0 VI = VCC or GND; 5.5 IO = 0 VI = VCC 2.1 V; 4.5 to 5.5 IO = 0

2003 Jul 23

V

4.4

ILI

additional supply current per input

V 0.8

4.5

VI = VCC or GND

ICC

2.0

10

1.0

A

10

A

40

A

590

A

Philips Semiconductors

Product specification

Hex inverter

74HC04; 74HCT04

AC CHARACTERISTICS Family 74HC04 GND = 0 V; tr = tf SYMBOL

6.0 ns; CL = 50 pF. PARAMETER

TEST CONDITIONS WAVEFORMS

VCC (V)

MIN.

TYP.

MAX.

UNIT

Tamb = 25 C t PHL/tPLH

t THL/tTLH

propagation delay nA to nY output transition time

see Figs 6 and 7

see Figs 6 and 7

2.0

25

85

ns

4.5 6.0

9 7

17 14

ns ns

2.0

19

75

ns

4.5

7

15

ns

6.0

6

13

ns

2.0

105

ns

4.5

21

ns

6.0 2.0

18 95

ns ns

4.5

19

ns

6.0

16

ns

2.0 4.5

130 26

ns ns

6.0

22

ns

Tamb = 40 to +85 C tPHL/tPLH

tTHL/tTLH

propagation delay nA to nY output transition time

see Figs 6 and 7

see Figs 6 and 7

Tamb = 40 to +125 C tPHL/tPLH

tTHL/tTLH

propagation delay nA to nY output transition time

see Figs 6 and 7