BC337 Transistor Datasheet PDF

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Description

BC337, BC337-25, BC337-40 Amplifier Transistors NPN Silicon

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Features

•

−Free Devices

These are Pb

COLLECTOR 1 2

MAXIMUM RATINGS

BASE

Rating

Symbol

Value

Unit

Collector

−

Emitter Voltage

VCEO

45

Vdc

Collector

−

Base Voltage

VCBO

50

Vdc

Emitter

−

Base Voltage

− Continuous

Collector Current

°

Total Device Dissipation @ TA = 25 C

VEBO

5.0

Vdc

IC

800

mAdc

PD

625

mW

5.0

mW/ C

1.5

W

12

mW/ C

°

Derate above 25 C

°

Total Device Dissipation @ TC = 25 C

PD

°

Derate above 25 C Operating and Storage Junction

TJ, Tstg

− 55

°

°

3 EMITTER

−92

TO

CASE 29 STYLE 17

°C

to +150

1

Temperature Range

THERMAL CHARACTERISTICS Characteristic

Symbol

− −Ambient

Thermal Resistance, Junction to Thermal Resistance, Junction

−to−Case

Max 200

°C/W

RqJC

83.3

°C/W

2

3

3

STRAIGHT LEAD BULK PACK

Unit

RqJA

1 2

BENT LEAD TAPE & REEL AMMO PACK

MARKING DIAGRAM

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.

BC33 7

−xx

AYWW

G

G

BC337

−xx

=

Device Code (Refer to page 4)

A

= Assembly Location

Y

= Year

WW

= Work Week

G

= Pb

−Free Package

(Note: Microdot may be in either location)

−Free strategy and soldering details, please

*For additional information on our Pb download

the

ON

Semiconductor

Soldering

and

Mounting

Techniques

ORDERING INFORMATION Se e detailed ordering and shipping information in the package

Reference Manual, SOLDERRM/D.

dimensions section on page 4 of this data sheet.



Semiconductor Components Industries, LLC, 2013

November, 2013

− Rev. 8

1

Publication Order Number: BC337/D

BC337, BC337

−25, BC337−40

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic

Symbol

Min

Typ

Max

Unit

V(BR)CEO

45

−

−

Vdc

V(BR)CES

50

−

−

Vdc

V(BR)EBO

5.0

−

−

Vdc

ICBO

−

−

100

nAdc

ICES

−

−

100

nAdc

IEBO

−

−

100

nAdc

BC337

100

630

−25 −40

160

60

− − − −

VBE(on)

−

−

1.2

Vdc

VCE(sat)

−

−

0.7

Vdc

Cob

−

15

−

pF

fT

−

210

−

MHz

OFF CHARACTERISTICS Collector

− Emitter Breakdown Voltage

(IC = 10 mA, IB = 0) Collector

− Emitter Breakdown Voltage mA, IE = 0)

(IC = 100

− Base Breakdown Voltage mA, IC = 0)

Emitter

(IE = 10

Collector Cutoff Current (VCB = 30 V, IE = 0) Collector Cutoff Current (VCE = 45 V, VBE = 0) Emitter Cutoff Current (VEB = 4.0 V, IC = 0) ON CHARACTERISTICS DC Current Gain

−

hFE

(IC = 100 mA, VCE = 1.0 V)

BC337 BC337

250

(IC = 300 mA, VCE = 1.0 V)

Base

−Emitter On Voltage

400 630

−

(IC = 300 mA, VCE = 1.0 V) Collector

− Emitter Saturation Voltage

(IC = 500 mA, IB = 50 mA) SMALL

−SIGNAL CHARACTERISTICS

Output Capacitance (VCB = 10 V, IE = 0, f = 1.0 MHz) Current

− Gain − Bandwidth Product

(IC = 10 mA, VCE = 5.0 V, f = 100 MHz) Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

1.0 0.7 0.5

D = 0.5

0.3

0.2

0.2

0.1

0.1 0.05 0.07 0.02 0.05 0.03

P(pk) SINGLE PULSE 0.01

t1

D CURVES APPLY FOR

t2

SINGLE PULSE

POWER PULSE TRAIN SHOWN

DUTY CYCLE, D = t 1/t 2

0.02 0.01 0.001

qJC(t) = (t) qJC qJC = 100°C/W MAX qJA(t) = r(t) qJA qJA = 375°C/W MAX

READ TIME AT t1 TJ(pk)

0.002

0.005

0.01

0.02

0.05

0.1

0.2 0.5 t, TIME (SECONDS)

1.0

Figure 1. Thermal Response

http://onsemi.com 2

2.0

5.0

10

− TC = P(pk) qJC(t)

20

50

100

BC337, BC337

1.0 s

h FE, DC CURRENT GAIN

dc T C = 25°C dc TA = 25°C

100

CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT (APPLIES BELOW RATED VCEO) 3.0 10 30 VCE, COLLECTOR-EMITTER VOLTAGE

Figure 2. Active Region

VCE = 1 V T J = 25°C

100

10 0.1

100

1.0 10 100 IC, COLLECTOR CURRENT (MA)

− Safe Operating Area

1000

Figure 3. DC Current Gain

1.0

1.0 T J = 25°C

TA = 25°C

VBE(sat) @ IC/IB = 10

0.8

0.8

0.6 100 mA

IC = 10 mA

0.4

300 mA

500 mA

VBE(on) @ VCE = 1 V 0.6

0.4

0.2

0.2

VCE(sat) @ IC/IB = 10 0 0.01

0 0.1

1

10

100

1

10

100

IB, BASE CURRENT (mA)

IC, COLLECTOR CURRENT (mA)

Figure 4. Saturation Region

Figure 5. “On” Voltages

1000

100

+1 qVC for VCE(sat) 0

C, CAPACITANCE (pF)

VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)

T J = 135°C 100 ms

10 1.0

θV, TEMPERATURE COEFFICIENTS (mV/°C)

1000

1.0 ms

V, VOLTAGE (VOLTS)

IC, COLLECTOR CURRENT (mA)

1000

−25, BC337−40

-1

Cib 10

Cob

qVB for VBE

-2

1

10 100 IC, COLLECTOR CURRENT (mA)

1 0.1

1000

1

10

VR, REVERSE VOLTAGE (VOLTS) Figure 7. Capacitances

Figure 6. Temperature Coefficients

http://onsemi.com 3

100

BC337, BC337

−25, BC337−40

ORDERING INFORMATION Device

Marking

BC337G

7

BC337RL1G

7 7

−25

−25RL1G

7

−25

−25RLRAG

7

−25ZL1G

7

−040G

BC337 BC337

BC337

−025G

BC337

BC337 BC337 BC337

Package

Shipping

†

5000 Units / Bulk 2000 / Tape & Reel 5000 Units / Bulk 2000 / Tape & Reel

−92

TO

−25

(Pb

−Free)

2000 / Tape & Reel

−25

2000 / Ammo Box

7

−40

5000 Units / Bulk

−40RL1G

7

−40

2000 / Tape & Reel

−40ZL1G

7

−40

2000 / Ammo Box

† For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.

http://onsemi.com 4

MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS

−92 (TO−226) −11

TO

CASE 29 SCALE 1:1

ISSUE AM DATE 09 MAR 2007

1

1 2

2

3

3

STRAIGHT LEAD BULK PACK

BENT LEAD TAPE & REEL AMMO PACK

A

B

NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM.

STRAIGHT LEAD BULK PACK

R P L

SEATING PLANE

K

X

D

X G

J

H V

C

−X

SECTION X

1

INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.021 0.045 0.055 0.095 0.105 0.015 0.020 0.500 --0.250 --0.080 0.105 --- 0.100 0.115 --0.135 ---

DIM A B C D G H J K L N P R V

N

MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.407 0.533 1.15 1.39 2.42 2.66 0.39 0.50 12.70 --6.35 --2.04 2.66 --2.54 2.93 --3.43 ---

N

A

R

NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM.

BENT LEAD

B

TAPE & REEL AMMO PACK

P T

SEATING PLANE

DIM A B C D G J K N P R V

K

X

D

X

G J V

C

−X

SECTION X

1

MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.40 0.54 2.40 2.80 0.39 0.50 12.70 --2.04 2.66 1.50 4.00 2.93 --3.43 ---

N

STYLES ON PAGE 2

DOCUMENT NUMBER:

98ASB42022B

Electronic

versions

are

uncontrolled

except

when

accessed directly from the Document Repository. Printed

STATUS:

ON SEMICONDUCTOR STANDARD

DESCRIPTION:

versions

are

uncontrolled

except

when

stamped

“CONTROLLED COPY” in red.

NEW STANDARD:

−92 (TO−226)

TO

PAGE 1 OF 3

−92 (TO−226) −11

TO

CASE 29

ISSUE AM DATE 09 MAR 2007

STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR

STYLE 2: PIN 1. BASE 2. EMITTER 3. COLLECTOR

STYLE 3: PIN 1. ANODE 2. ANODE 3. CATHODE

STYLE 4: PIN 1. CATHODE 2. CATHODE 3. ANODE

STYLE 5: PIN 1. DRAIN 2. SOURCE 3. GATE

STYLE 6: PIN 1. GATE 2. SOURCE & SUBSTRATE 3. DRAIN

STYLE 7: PIN 1. SOURCE 2. DRAIN 3. GATE

STYLE 8: PIN 1. DRAIN 2. GATE 3. SOURCE & SUBSTRATE

STYLE 9: PIN 1. BASE 1 2. EMITTER 3. BASE 2

STYLE 10: PIN 1. CATHODE 2. GATE 3. ANODE

STYLE 11: PIN 1. ANODE 2. CATHODE & ANODE 3. CATHODE

STYLE 12: PIN 1. MAIN TERMINAL 1 2. GATE 3. MAIN TERMINAL 2

STYLE 13: PIN 1. ANODE 1 2. GATE 3. CATHODE 2

STYLE 14: PIN 1. EMITTER 2. COLLECTOR 3. BASE

STYLE 15: PIN 1. ANODE 1 2. CATHODE 3. ANODE 2

STYLE 16: PIN 1. ANODE 2. GATE 3. CATHODE

STYLE 17: PIN 1. COLLECTOR 2. BASE 3. EMITTER

STYLE 18: PIN 1. ANODE 2. CATHODE 3. NOT CONNECTED

STYLE 19: PIN 1. GATE 2. ANODE 3. CATHODE

STYLE 20: PIN 1. NOT CONNECTED 2. CATHODE 3. ANODE

STYLE 21: PIN 1. COLLECTOR 2. EMITTER 3. BASE

STYLE 22: PIN 1. SOURCE 2. GATE 3. DRAIN

STYLE 23: PIN 1. GATE 2. SOURCE 3. DRAIN

STYLE 24: PIN 1. EMITTER 2. COLLECTOR/ANODE 3. CATHODE

STYLE 25: PIN 1. MT 1 2. GATE 3. MT 2

STYLE 26: PIN 1. VCC 2. GROUND 2 3. OUTPUT

STYLE 27: PIN 1. MT 2. SUBSTRATE 3. MT

STYLE 28: PIN 1. CATHODE 2. ANODE 3. GATE

STYLE 29: PIN 1. NOT CONNECTED 2. ANODE 3. CATHODE

STYLE 30: PIN 1. DRAIN 2. GATE 3. SOURCE

STYLE 31: PIN 1. GATE 2. DRAIN 3. SOURCE

STYLE 32: PIN 1. BASE 2. COLLECTOR 3. EMITTER

STYLE 33: PIN 1. RETURN 2. INPUT 3. OUTPUT

STYLE 34: PIN 1. INPUT 2. GROUND 3. LOGIC

STYLE 35: PIN 1. GATE 2. COLLECTOR 3. EMITTER

DOCUMENT NUMBER:

98ASB42022B

Electronic

versions

are

uncontrolled

except

when

accessed directly from the Document Repository. Printed

STATUS:

ON SEMICONDUCTOR STANDARD

DESCRIPTION:

versions

are

uncontrolled

except

when

stamped

“CONTROLLED COPY” in red.

NEW STANDARD:

−92 (TO−226)

TO

PAGE 2 OF 3

DOCUMENT NUMBER: 98ASB42022B

PAGE 3 OF 3

ISSUE AM

REVISION

DATE

−LEAD TAPE & REEL VERSION. REQ. BY J. SUPINA.

ADDED BENT

ON Semiconductor and

are registered trademarks of Semiconductor Components Industries, LLC (SCILLC).

09 MAR 2007

SCILLC reserves the right to make changes without further notice

to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different application s and actual performance may vary over time.

All

operating parameters, including “Typicals” must be validated for each customer application by customer ’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others.

SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications

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Should

Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. Opportunity/Affirmative Action Employer.



Semiconductor Components Industries, LLC, 2007

March, 2007

− Rev. 11AM

SCILLC is an Equal

This literature is subject to all applicable copyright laws and is not for resale in any manner.

Case Outline Number: 29

ON Semiconductor and

are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.

ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor ’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent

−Marking.pdf.

ON Semiconductor reserves the right to make changes without further notice to any products herein.

ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer ’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

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