Title | Datasheet BC337 |
---|---|
Author | Elías Salomón |
Course | Electrónica I Electrónica III |
Institution | Universidad Nacional de Tucumán |
Pages | 5 |
File Size | 364.8 KB |
File Type | |
Total Downloads | 86 |
Total Views | 179 |
Datasheet real del elemento electrónico...
BC337, BC337-25, BC337-40 Amplifier Transistors NPN Silicon
http://onsemi.com
Features
•
−Free Devices
These are Pb
COLLECTOR 1 2
MAXIMUM RATINGS
BASE
Rating
Symbol
Value
Unit
Collector
−
Emitter Voltage
VCEO
45
Vdc
Collector
−
Base Voltage
VCBO
50
Vdc
Emitter
−
Base Voltage
− Continuous
Collector Current
°
Total Device Dissipation @ TA = 25 C
VEBO
5.0
Vdc
IC
800
mAdc
PD
625
mW
5.0
mW/ C
1.5
W
12
mW/ C
°
Derate above 25 C
°
Total Device Dissipation @ TC = 25 C
PD
°
Derate above 25 C Operating and Storage Junction
TJ, Tstg
− 55
°
°
3 EMITTER
−92
TO
CASE 29 STYLE 17
°C
to +150
1
Temperature Range
THERMAL CHARACTERISTICS Characteristic
Symbol
− −Ambient
Thermal Resistance, Junction to Thermal Resistance, Junction
−to−Case
Max 200
°C/W
RqJC
83.3
°C/W
2
3
3
STRAIGHT LEAD BULK PACK
Unit
RqJA
1 2
BENT LEAD TAPE & REEL AMMO PACK
MARKING DIAGRAM
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
BC33 7
−xx
AYWW
G
G
BC337
−xx
=
Device Code (Refer to page 4)
A
= Assembly Location
Y
= Year
WW
= Work Week
G
= Pb
−Free Package
(Note: Microdot may be in either location)
−Free strategy and soldering details, please
*For additional information on our Pb download
the
ON
Semiconductor
Soldering
and
Mounting
Techniques
ORDERING INFORMATION Se e detailed ordering and shipping information in the package
Reference Manual, SOLDERRM/D.
dimensions section on page 4 of this data sheet.
Semiconductor Components Industries, LLC, 2013
November, 2013
− Rev. 8
1
Publication Order Number: BC337/D
BC337, BC337
−25, BC337−40
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic
Symbol
Min
Typ
Max
Unit
V(BR)CEO
45
−
−
Vdc
V(BR)CES
50
−
−
Vdc
V(BR)EBO
5.0
−
−
Vdc
ICBO
−
−
100
nAdc
ICES
−
−
100
nAdc
IEBO
−
−
100
nAdc
BC337
100
630
−25 −40
160
60
− − − −
VBE(on)
−
−
1.2
Vdc
VCE(sat)
−
−
0.7
Vdc
Cob
−
15
−
pF
fT
−
210
−
MHz
OFF CHARACTERISTICS Collector
− Emitter Breakdown Voltage
(IC = 10 mA, IB = 0) Collector
− Emitter Breakdown Voltage mA, IE = 0)
(IC = 100
− Base Breakdown Voltage mA, IC = 0)
Emitter
(IE = 10
Collector Cutoff Current (VCB = 30 V, IE = 0) Collector Cutoff Current (VCE = 45 V, VBE = 0) Emitter Cutoff Current (VEB = 4.0 V, IC = 0) ON CHARACTERISTICS DC Current Gain
−
hFE
(IC = 100 mA, VCE = 1.0 V)
BC337 BC337
250
(IC = 300 mA, VCE = 1.0 V)
Base
−Emitter On Voltage
400 630
−
(IC = 300 mA, VCE = 1.0 V) Collector
− Emitter Saturation Voltage
(IC = 500 mA, IB = 50 mA) SMALL
−SIGNAL CHARACTERISTICS
Output Capacitance (VCB = 10 V, IE = 0, f = 1.0 MHz) Current
− Gain − Bandwidth Product
(IC = 10 mA, VCE = 5.0 V, f = 100 MHz) Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1.0 0.7 0.5
D = 0.5
0.3
0.2
0.2
0.1
0.1 0.05 0.07 0.02 0.05 0.03
P(pk) SINGLE PULSE 0.01
t1
D CURVES APPLY FOR
t2
SINGLE PULSE
POWER PULSE TRAIN SHOWN
DUTY CYCLE, D = t 1/t 2
0.02 0.01 0.001
qJC(t) = (t) qJC qJC = 100°C/W MAX qJA(t) = r(t) qJA qJA = 375°C/W MAX
READ TIME AT t1 TJ(pk)
0.002
0.005
0.01
0.02
0.05
0.1
0.2 0.5 t, TIME (SECONDS)
1.0
Figure 1. Thermal Response
http://onsemi.com 2
2.0
5.0
10
− TC = P(pk) qJC(t)
20
50
100
BC337, BC337
1.0 s
h FE, DC CURRENT GAIN
dc T C = 25°C dc TA = 25°C
100
CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT (APPLIES BELOW RATED VCEO) 3.0 10 30 VCE, COLLECTOR-EMITTER VOLTAGE
Figure 2. Active Region
VCE = 1 V T J = 25°C
100
10 0.1
100
1.0 10 100 IC, COLLECTOR CURRENT (MA)
− Safe Operating Area
1000
Figure 3. DC Current Gain
1.0
1.0 T J = 25°C
TA = 25°C
VBE(sat) @ IC/IB = 10
0.8
0.8
0.6 100 mA
IC = 10 mA
0.4
300 mA
500 mA
VBE(on) @ VCE = 1 V 0.6
0.4
0.2
0.2
VCE(sat) @ IC/IB = 10 0 0.01
0 0.1
1
10
100
1
10
100
IB, BASE CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
Figure 4. Saturation Region
Figure 5. “On” Voltages
1000
100
+1 qVC for VCE(sat) 0
C, CAPACITANCE (pF)
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
T J = 135°C 100 ms
10 1.0
θV, TEMPERATURE COEFFICIENTS (mV/°C)
1000
1.0 ms
V, VOLTAGE (VOLTS)
IC, COLLECTOR CURRENT (mA)
1000
−25, BC337−40
-1
Cib 10
Cob
qVB for VBE
-2
1
10 100 IC, COLLECTOR CURRENT (mA)
1 0.1
1000
1
10
VR, REVERSE VOLTAGE (VOLTS) Figure 7. Capacitances
Figure 6. Temperature Coefficients
http://onsemi.com 3
100
BC337, BC337
−25, BC337−40
ORDERING INFORMATION Device
Marking
BC337G
7
BC337RL1G
7 7
−25
−25RL1G
7
−25
−25RLRAG
7
−25ZL1G
7
−040G
BC337 BC337
BC337
−025G
BC337
BC337 BC337 BC337
Package
Shipping
†
5000 Units / Bulk 2000 / Tape & Reel 5000 Units / Bulk 2000 / Tape & Reel
−92
TO
−25
(Pb
−Free)
2000 / Tape & Reel
−25
2000 / Ammo Box
7
−40
5000 Units / Bulk
−40RL1G
7
−40
2000 / Tape & Reel
−40ZL1G
7
−40
2000 / Ammo Box
† For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.
http://onsemi.com 4
BC337, BC337
−25, BC337−40
PACKAGE DIMENSIONS
−92 (TO−226) −11
TO
CASE 29
ISSUE AM
A
B
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM.
STRAIGHT LEAD BULK PACK
R P L
SEATING PLANE
K
X
DIM A B C D G H J K L N P R V
D
X G
J
H V
C
−X
SECTION X
1
N
INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.021 0.045 0.055 0.095 0.105 0.015 0.020 0.500 --0.250 --0.080 0.105 --- 0.100 0.115 --0.135 ---
MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.407 0.533 1.15 1.39 2.42 2.66 0.39 0.50 12.70 --6.35 --2.04 2.66 --2.54 2.93 --3.43 ---
N
A
R
NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM.
BENT LEAD
B
TAPE & REEL AMMO PACK
P T
SEATING PLANE
K
X
DIM A B C D G J K N P R V
D
X
G J V
C
−X
SECTION X
1
ON Semiconductor and
MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.40 0.54 2.40 2.80 0.39 0.50 12.70 --2.04 2.66 1.50 4.00 2.93 --3.43 ---
N
STYLE 17: PIN 1. COLLECTOR 2. BASE 3. EMITTER
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BC337/D...