Title | BC548 datasheet - ffffff |
---|---|
Author | Jonathan Greppi |
Course | Mediciones y Metrologia |
Institution | Universidad Nacional de Misiones |
Pages | 4 |
File Size | 170.9 KB |
File Type | |
Total Downloads | 89 |
Total Views | 138 |
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BC548 / BC548A / BC548B / BC548C
BC548 BC548A BC548B BC548C
E
B
TO-92 C
NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 10. See PN100A for characteristics.
Absolute Maximum Ratings* Symbol
TA = 25°C unless otherwise noted
Parameter
Value
Units
VCEO
Collector-Emitter Voltage
30
V
VCES
Collector-Base Voltage
30
V
VEBO
Emitter-Base Voltage
IC
Collector Current - Continuous Operating and Storage Junction Temperature Range
T J, Tstg
5.0
V
500 -55 to +150
mA C
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics Symbol PD
TA = 25°C unless otherwise noted
Characteristic
R
JC
Total Device Dissipation Derate above 25 C Thermal Resistance, Junction to Case
R
JA
Thermal Resistance, Junction to Ambient
1997 Fairchild Semiconduct or Corporat ion
Max
Units
BC548 / A / B / C 625 5.0 83.3
mW mW/ C C/W
200
C/W
548-ABC, Rev B
(continued)
Electrical Characteristics Symbol
TA = 25°C unless otherwise noted
Parameter
Test Conditions
Min
Max
Units
OFF CHARACTERISTICS V(BR)CEO V(BR)CBO
Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage
IC = 10 mA, IB = 0 IC = 10 A, IE = 0
30 30
V V
V(BR)CES V(BR)EBO
Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage
IC = 10 A, IE = 0 IE = 10 A, IC = 0
30 5.0
V V
ICBO
Collector Cutoff Current
VCB = 30 V, IE = 0 VCB = 30 V, IE = 0, T A = +150 C
15 5.0
nA A
800 220 450 800 0.25 0.60 0.70 0.77
V V V V
ON CHARACTERISTICS hFE
DC Current Gain
VCE = 5.0 V, IC = 2.0 mA
VCE(sat )
Collector-Emitter Saturation Voltage
VBE(on)
Base-Emitter On Voltage
IC = 10 mA, IB = 0.5 mA IC = 100 mA, IB = 5.0 mA VCE = 5.0 V, IC = 2.0 mA VCE = 5.0 V, IC = 10 mA
548 548A 548B 548C
110 110 200 420
0.58
SMALL SIGNAL CHARACTERISTICS hfe
Small-Signal Current Gain
NF
Noise Figure
IC = 2.0 mA, VCE = 5.0 V, f = 1.0 kHz VCE = 5.0 V, IC = 200 A, RS = 2.0 k , f = 1.0 kHz, BW = 200 Hz
125
900 10
dB
BC548 / BC548A / BC548B / BC548C
NPN General Purpose Amplifier
TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
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PowerTrench QFET™ QS™ QT Optoelectronics™ Quiet Series™ SILENT SWITCHER SMART START™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8
SyncFET™ TinyLogic™ UHC™ VCX™
DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life systems which, (a) are intended for surgical implant into support device or system whose failure to perform can the body, or (b) support or sustain life, or (c) whose be reasonably expected to cause the failure of the life failure to perform when properly used in accordance support device or system, or to affect its safety or with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification
Product Status
Advance Information
Formative or In Design
Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Rev. G
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