Title | Nmos pmos - dsdssds |
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Course | Electrical and Electronic Laboratory |
Institution | Universiti Teknologi Malaysia |
Pages | 1 |
File Size | 45.2 KB |
File Type | |
Total Downloads | 44 |
Total Views | 126 |
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Complete Table 1 through hand calculation and simulation analysis using LTSPICE for NMOS transistor. ii. Determine the mode of operation for all condition and calculate ID. iii. Draw the DC biasing circuit in LTSPICE and run the simulation analysis. iv. Plot the I-V characteristics of IDS-VGS and IDS-VDS on part (i) using LTSPICE. You must use do simulation for both standard transistor parameters of 0.25 µm process and BSIM3 (level 49). v. Confirm the mode of operation for all condition with simulation analysis. vi. You must attach .op file in the report. vii. Do not ignore channel length modulation in your calculation. Assume VS = 0 V for all condition....